亚洲精品日韩专区在线观看_岛国精品视频_嗯啊肚兜耸动裸露h快穿_日本在线毛片视频免费看

CN EN
Home
About Us
Newpros
IGBT Micro Trench Discrete for PV/Eenergy Storage/ EV Charger Application
IGBT Micro Trench Discrete for PV/Eenergy Storage/ EV Charger Application Back
 PDF

Introduction 1、TO-247package 50A 650V IGBT discrete；
2、The voltage level is 650V, the current level is 50A@Tc=100℃；
3、It is mainly used for PV/Eenergy Storage/ EV charger and other high-frequency applications；
4、Low conduction loss, low switching loss, high reliability；
5、Use environmentally friendly materials and meet RoHS standards；
Features 1、Tjmax=175℃;
2、Positive temperature coefficient ；
3、High voltage 650V；
4、Low conduction loss, low switching loss, meet the high frequency application conditions；
5、The latest generation of micro trench design, a cost-effective product；
SPECIFICATION

DGW50N65CTL0

Related new products

N60V SGT MOSFET

Portable energy storage power supply special plug-in type fast recovery bridge

IGBT Micro Trench Discrete for PV/Eenergy Storage/EV Charger Application

Optimization Design of Rectifier Bridge —— New Package GBU-L

SOD-123HE TVS Diode

N30V Trench MOSFET for PD VBUS

IGBT Fast Series

New N150V SGT MOSFETs

SJ MOSFET for PV Micro-inverter & Industrial /Server Power Supplies

IGBT high frequency series C1 module